Semiconductor laser device having little astigmatism
文献类型：专利
| 作者 | CHINONE, NAOKI; YAMASHITA, SHIGEO; NAKATSUKA, SHIN'ICHI; YAMANAKA, AKEMI; ONO, YUICHI; KAWANO, TOSHIHIRO; UOMI, KAZUHISA; KAJIMURA, TAKASHI; TANAKA, TOSHIAKI; AIKI, KUNIO |
| 发表日期 | 1988-10-25 |
| 专利号 | US4780879 |
| 著作权人 | OPNEXT JAPAN, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device having little astigmatism |
| 英文摘要 | A semiconductor laser device having a stripe-shaped active region defined between a pair of end surfaces, at least one of the end surfaces having a curved cross-section in a plane parallel to the active region with a radius of curvature from 10 to 300 mu m, the stripe of the active region having such a width that a single transverse mode and a multi-longitudinal mode are allowed. The laser beam emitted from this laser can have little astigmatism and small spot size. |
| 公开日期 | 1988-10-25 |
| 申请日期 | 1987-02-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46077]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OPNEXT JAPAN, INC. |
| 推荐引用方式 GB/T 7714 | CHINONE, NAOKI,YAMASHITA, SHIGEO,NAKATSUKA, SHIN'ICHI,et al. Semiconductor laser device having little astigmatism. US4780879. 1988-10-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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