Semiconductor laser and method for manufacturing semiconductor laser
文献类型：专利
| 作者 | MORI, KENZO; KIMURA, TADASHI; YOSHITATU, KAWAMA; NOBUAKI, KANENO; TATUYA, KIMURA; YUJI, OKURA; HITOSHI, TADA |
| 发表日期 | 1997-01-08 |
| 专利号 | GB2267602B |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method for manufacturing semiconductor laser |
| 英文摘要 | The laser includes a first conductivity type semiconductor substrate (1); a double-heterojunction structure including a first conductivity type cladding layer (2), an active layer (3), and a second conductivity type cladding layer (4) successively disposed on the semiconductor substrate (1); two parallel grooves for forming the double heterojunction structure in a mesa stripe; a first conductivity type layer (5). a second conductivity type current blocking layer (6), and a first conductivity type current blocking layer (7) successively disposed on the semiconductor substrate (1) and contacting opposite sides of the mesa; and impurity doped regions (13) formed by adding an impurity from the surface of the first conductivity type current blocking layer (7).; The impurity doped regions (13) electrically separate an upper part of the mesa from the second conductivity type current blocking layer (6) at opposite sides of the mesa. Since the second conductivity type current blocking layer (6) is not in contact with the mesa structure, no leakage current path is formed in the laser structure. |
| 公开日期 | 1997-01-08 |
| 申请日期 | 1993-05-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46080]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | MORI, KENZO,KIMURA, TADASHI,YOSHITATU, KAWAMA,et al. Semiconductor laser and method for manufacturing semiconductor laser. GB2267602B. 1997-01-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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