Process for producing semiconductor laser element including S-ARROW structure formed by etching through mask having pair of parallel openings
文献类型：专利
| 作者 | MATUMOTO, KENJI |
| 发表日期 | 2004-03-16 |
| 专利号 | US6707835 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Process for producing semiconductor laser element including S-ARROW structure formed by etching through mask having pair of parallel openings |
| 英文摘要 | In a process for producing a semiconductor laser element, a mask having a pair of openings is formed on a current stopping layer formed above a first cladding layer; a pair of first grooves are formed in the current stopping layer by etching using the mask; portions of the first cladding layer located at the bottoms of the pair of first grooves are etched off so as to form a pair of second grooves in the first cladding layer, and a portion of the current stopping layer left between the pair of first grooves are etched off; the pair of second grooves are filled with a material having a refractive index higher than that of the first cladding layer; and a second cladding layer is formed over the pair of second grooves and the region of the first cladding layer located between the pair of second grooves. |
| 公开日期 | 2004-03-16 |
| 申请日期 | 2002-07-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46082]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | MATUMOTO, KENJI. Process for producing semiconductor laser element including S-ARROW structure formed by etching through mask having pair of parallel openings. US6707835. 2004-03-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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