Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers
文献类型：专利
| 作者 | JOHNSTON, JR., WILBUR D.; KARLICEK, JR., ROBERT F.; LONG, JUDITH A.; WILT, DANIEL P. |
| 发表日期 | 1991-03-12 |
| 专利号 | US4999315 |
| 著作权人 | AT&T BELL LABORATORIES |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers |
| 英文摘要 | High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also disclosed is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area. |
| 公开日期 | 1991-03-12 |
| 申请日期 | 1989-12-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46090]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T BELL LABORATORIES |
| 推荐引用方式 GB/T 7714 | JOHNSTON, JR., WILBUR D.,KARLICEK, JR., ROBERT F.,LONG, JUDITH A.,et al. Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers. US4999315. 1991-03-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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