Monolithic multi-wavelength semiconductor laser unit
文献类型：专利
| 作者 | GEN-EI, KOICHI; SHIOZAWA, HIDEO; TANAKA, AKIRA |
| 发表日期 | 2003-09-09 |
| 专利号 | US6618420 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Monolithic multi-wavelength semiconductor laser unit |
| 英文摘要 | This is a double wavelength semiconductor laser unit having a first laser emitting a light of a first wavelength and a second laser emitting a light of a second wavelength different from the first wavelength. The first and second lasers are merged on a substrate. The first laser has a bulk active layer whose film thickness is 0.01 mum or more and 0.1 mum or less. And the second laser has an MQW active layer constituted by stacked structure composed of a quantum well layer and a barrier layer. By employing the bulk active layer for the first laser, it is possible to reduce the band gap discontinuity induced at a boundary between a cladding layer and the bulk active layer, and then decreases an operational voltage, and further improve the reliability of the first laser. |
| 公开日期 | 2003-09-09 |
| 申请日期 | 2000-08-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46095]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | GEN-EI, KOICHI,SHIOZAWA, HIDEO,TANAKA, AKIRA. Monolithic multi-wavelength semiconductor laser unit. US6618420. 2003-09-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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