Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer
文献类型：专利
| 作者 | HATANO, AKO; OHBA, YASUO; FUJIMOTO, HIDETOSHI; ITAYA, KAZUHIKO; NISHIO, JOHJI |
| 发表日期 | 1999-12-07 |
| 专利号 | US5998810 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer |
| 英文摘要 | A semiconductor light-emitting diode exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor light-emitting diode is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors. |
| 公开日期 | 1999-12-07 |
| 申请日期 | 1997-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46096]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | HATANO, AKO,OHBA, YASUO,FUJIMOTO, HIDETOSHI,et al. Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer. US5998810. 1999-12-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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