Semiconductor devices, and methods of manufacture of the same
文献类型：专利
| 作者 | YABUSAKI, KEIICHI; OHKUBO, MICHIO |
| 发表日期 | 2005-01-25 |
| 专利号 | US6847055 |
| 著作权人 | THE FURUKAWA ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor devices, and methods of manufacture of the same |
| 英文摘要 | The semiconductor laser device has the lower clad layer, active layer, upper clad layer, contact layer, the insulating film, and the positive electrode sequentially formed on the semiconductor substrate. The upper clad layer, the contact layer and the insulating film form the ridge. The positive electrode covers the upper and side faces of the ridge. The thickness of the positive electrode on the upper and side faces of the ridge is preferably substantially the same and it is not less than 150 nm. |
| 公开日期 | 2005-01-25 |
| 申请日期 | 2003-10-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46100]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE FURUKAWA ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | YABUSAKI, KEIICHI,OHKUBO, MICHIO. Semiconductor devices, and methods of manufacture of the same. US6847055. 2005-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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