Superluminescent diode and method of manufacturing the same
文献类型：专利
| 作者 | PARK, MOON HO; BAEK, YONG SOON; OH, KWANG RYONG |
| 发表日期 | 2009-10-06 |
| 专利号 | US7599403 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Superluminescent diode and method of manufacturing the same |
| 英文摘要 | A 55 μm SLD having a laser diode (LD) region and a semiconductor optical amplifier (SOA) region, and a method of fabricating the same, are disclosed. The SLD includes: an InP substrate having a LD region and a SOA region for amplifying light emitted from the LD region; an optical waveguide having a BRS (buried ridge strip) structure having an active layer of resonant strip pattern formed on the InP substrate and extending from the SOA region to the LD region; a first electrode formed on the active layer in the SOA region, a second electrode formed on the active layer in the LD region and electrically isolated from the first electrode; and a current blocking region interposed between the first electrode and the second electrode in order to electrically isolate the first electrode and the second electrode from each other. |
| 公开日期 | 2009-10-06 |
| 申请日期 | 2006-12-07 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46110]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | PARK, MOON HO,BAEK, YONG SOON,OH, KWANG RYONG. Superluminescent diode and method of manufacturing the same. US7599403. 2009-10-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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