Wide-stripe single-mode diode-laser
文献类型：专利
| 作者 | ANIKITCHEV, SERGUEI G.; CAPRARA, ANDREA |
| 发表日期 | 2006-11-21 |
| 专利号 | US7139300 |
| 著作权人 | COHERENT, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Wide-stripe single-mode diode-laser |
| 英文摘要 | A wide-stripe diode-laser includes a lower cladding region, a lower waveguide region, an active region, an upper waveguide region, and an upper cladding region all comprising semiconductor layers epitaxially grown on a semiconductor substrate. An elongated rectangular electrode on the upper cladding layer defines a stripe or pumped section. Adjacent the electrode is an unpumped section in which at least the quantum-well layer has been treated to cause the active region to be disordered. In this unpumped section, at least one area of the area is etched to a depth equal to or less than the thickness of the cladding region. The etched area provides a diverging lens effect in the waveguide region. The diverging lens effect expands the fundamental mode of the laser in the stripe to a width sufficient to improve single mode performance. |
| 公开日期 | 2006-11-21 |
| 申请日期 | 2003-08-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46115]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | COHERENT, INC. |
| 推荐引用方式 GB/T 7714 | ANIKITCHEV, SERGUEI G.,CAPRARA, ANDREA. Wide-stripe single-mode diode-laser. US7139300. 2006-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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