中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Method for manufacturing of integrated DFB laser with coupled strip waveguide on a substrate

文献类型:专利

作者AMANN, MARKUS-CHRISTIAN; MAHLEIN, HANS F.; STEGMUELLER, BERNHARD; THULKE, WOLFGANG; WINZER, GERHARD; WOLFF, ULRICH
发表日期1987-04-07
专利号US4656636
著作权人SIEMENS AKTIENGESELLSCHAFT
国家美国
文献子类授权发明
其他题名Method for manufacturing of integrated DFB laser with coupled strip waveguide on a substrate
英文摘要A method for integrating a DFB laser and a passive strip waveguide on a substrate. A layer stack is produced in a first epitaxy step, the layer stack having a laser-active layer and a surface-wide grating on the uppermost layer, and eroding the stack area-wise, but only down to a layer under the laser-active layer, not down to the substrate, by means of etching to create a step separating the laser region from the passive strip waveguide region. By employing an etching stop layer, the etching can ensue self-adjustingly, and the coupling between the laser-active layer and the passive strip waveguide region occurs not by end coupling, but by surface coupling. Only two epitaxy steps are required for the complete manufacture of the structure, and a strip required for the definition of the laser and of the waveguide can be produced in the same single method step.
公开日期1987-04-07
申请日期1985-12-23
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/46117]  
专题半导体激光器专利数据库
作者单位SIEMENS AKTIENGESELLSCHAFT
推荐引用方式
GB/T 7714
AMANN, MARKUS-CHRISTIAN,MAHLEIN, HANS F.,STEGMUELLER, BERNHARD,et al. Method for manufacturing of integrated DFB laser with coupled strip waveguide on a substrate. US4656636. 1987-04-07.

入库方式: OAI收割

来源:西安光学精密机械研究所

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