Multi-wavelength semiconductor lasers
文献类型:专利
作者 | CHUA, SOO JIN; TENG, JINHUA |
发表日期 | 2005-08-30 |
专利号 | US6937633 |
著作权人 | NATIONAL UNIVERSITY OF SINGAPORE, THE |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Multi-wavelength semiconductor lasers |
英文摘要 | A multi-wavelength semiconductor laser is formed by monolithically integrating a plurality of laser diodes (1, 2) with at least one isolator section (3) and a coupler (4), which couples the different emission wavelengths λ1, λ2 into one output port (5). The isolator section can be either a light absorptive type or wavelength selective type, including a Bragg grating type isolator or a photonic bandgap crystal type isolator. The coupler is preferably a Y-junction coupler, but can also be a multi-branch waveguide coupler or a waveguide directional coupler. |
公开日期 | 2005-08-30 |
申请日期 | 2001-06-20 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/46120] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NATIONAL UNIVERSITY OF SINGAPORE, THE |
推荐引用方式 GB/T 7714 | CHUA, SOO JIN,TENG, JINHUA. Multi-wavelength semiconductor lasers. US6937633. 2005-08-30. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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