中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Multi-wavelength semiconductor lasers

文献类型:专利

作者CHUA, SOO JIN; TENG, JINHUA
发表日期2005-08-30
专利号US6937633
著作权人NATIONAL UNIVERSITY OF SINGAPORE, THE
国家美国
文献子类授权发明
其他题名Multi-wavelength semiconductor lasers
英文摘要A multi-wavelength semiconductor laser is formed by monolithically integrating a plurality of laser diodes (1, 2) with at least one isolator section (3) and a coupler (4), which couples the different emission wavelengths λ1, λ2 into one output port (5). The isolator section can be either a light absorptive type or wavelength selective type, including a Bragg grating type isolator or a photonic bandgap crystal type isolator. The coupler is preferably a Y-junction coupler, but can also be a multi-branch waveguide coupler or a waveguide directional coupler.
公开日期2005-08-30
申请日期2001-06-20
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/46120]  
专题半导体激光器专利数据库
作者单位NATIONAL UNIVERSITY OF SINGAPORE, THE
推荐引用方式
GB/T 7714
CHUA, SOO JIN,TENG, JINHUA. Multi-wavelength semiconductor lasers. US6937633. 2005-08-30.

入库方式: OAI收割

来源:西安光学精密机械研究所

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