Semiconductor laser device including a gallium-aluminum arsenic compound
文献类型：专利
| 作者 | NAITOU, HIROKI; KUME, MASAHIRO; OTA, ISSEI; SHIMIZU, HIROKAZU |
| 发表日期 | 1994-03-22 |
| 专利号 | US5297158 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device including a gallium-aluminum arsenic compound |
| 英文摘要 | In a semiconductor laser device, a Ga1-yAlyAs cladding layer of a conduction type is provided on at least one principal plane of an active layer, while a Ga1-ZAlZAs current blocking layer of the other conduction type is provided on the cladding layer and has a stripe-like window. The AlAs mode fractions Y and Z has a relation, Z>Y. The semiconductor laser device has low noises and a low operating current value. |
| 公开日期 | 1994-03-22 |
| 申请日期 | 1992-04-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46124]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | NAITOU, HIROKI,KUME, MASAHIRO,OTA, ISSEI,et al. Semiconductor laser device including a gallium-aluminum arsenic compound. US5297158. 1994-03-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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