Semiconductor laser having an improved window layer and method for the same
文献类型：专利
| 作者 | ONO, KENICHI; TAKEMI, MASAYOSHI; NISHIGUCHI, HARUMI |
| 发表日期 | 2009-09-15 |
| 专利号 | US7590158 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser having an improved window layer and method for the same |
| 英文摘要 | A first buffer layer (GaAs), a second buffer layer (AlGaAs), and a diffusion suppressing layer consisting of GaAs or AlGaAs are stacked on a GaAs substrate. The structure has a first cladding layer thereon. When AlGaAs is used for the diffusion suppressing layer, the Al ratio of AlGaAs is made smaller than in the second buffer layer. In such a structure, when a window region is formed, the diffusion rate of the impurity (Zn) can be lowered in the diffusion suppressing layer, and the diffusion of the impurity can be stopped at the second buffer layer. |
| 公开日期 | 2009-09-15 |
| 申请日期 | 2006-06-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46125]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | ONO, KENICHI,TAKEMI, MASAYOSHI,NISHIGUCHI, HARUMI. Semiconductor laser having an improved window layer and method for the same. US7590158. 2009-09-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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