Semiconductor diode lasers
文献类型：专利
| 作者 | BARNARD, JOSEPH A.; PUN, EDWIN Y. B. |
| 发表日期 | 1987-05-05 |
| 专利号 | US4663761 |
| 著作权人 | GENERAL ELECTRIC COMPANY, P.L.C., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor diode lasers |
| 英文摘要 | A semiconductor diode laser of the kind in which laser radiation occurs in an active region in a layer (3) of semiconductor material wherein optical confinement of the radiation to a portion (19) of said layer so as to direct light from said region to a light waveguide is obtained by virtue of differences in the refractive index of different parts of said layer arising from mechanical stresses in said layer, produced, for example, by differential thermal contraction during fabrication of the laser of different parts (96, 11b and 13, 15 or 21 and 5 or 23 and 3) of the laser structure. |
| 公开日期 | 1987-05-05 |
| 申请日期 | 1984-10-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46128]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GENERAL ELECTRIC COMPANY, P.L.C., THE |
| 推荐引用方式 GB/T 7714 | BARNARD, JOSEPH A.,PUN, EDWIN Y. B.. Semiconductor diode lasers. US4663761. 1987-05-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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