Gain-coupled DFB laser diode
文献类型：专利
| 作者 | ISHIKAWA, TSUTOMU; KOBAYASHI, HIROHIKO; SEKINE, NORIHIKO; SHOIJ, HAJIME |
| 发表日期 | 2005-08-02 |
| 专利号 | US6925103 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Gain-coupled DFB laser diode |
| 英文摘要 | A gain-coupled DFB laser diode includes a multiple quantum well active layer and a pair of cladding layers sandwiching the multiple quantum well active layer vertically, wherein the multiple quantum well active layer includes a plurality of gain regions aligned in a direction of propagation of a laser beam and repeated periodically, each of the gain regions having a multiple quantum well structure, and a buried layer fills a gap between a pair of adjacent gain regions, wherein the buried layer includes a plurality of high-refractive index layers and a plurality of low-refractive index layers, each of the high-refractive index layers is formed of a first semiconductor material having a first bandgap, while each of the low-refractive index layers is formed of a second semiconductor material having a second, larger bandgap. |
| 公开日期 | 2005-08-02 |
| 申请日期 | 2002-10-29 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46134]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | ISHIKAWA, TSUTOMU,KOBAYASHI, HIROHIKO,SEKINE, NORIHIKO,et al. Gain-coupled DFB laser diode. US6925103. 2005-08-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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