面形光半導体装置
文献类型：专利
| 作者 | 岩田 普 |
| 发表日期 | 1996-01-29 |
| 专利号 | JP1996008393B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 面形光半導体装置 |
| 英文摘要 | PURPOSE:To facilitate integration by making the width of the forbidden band of a light receiving region and a light emitting region narrower than the width of the forbidden band of a GaAs substrate, absorbing the light inputted from a light input part with the light receiving region, and taking out the light emitted from the light emitting region in the direction perpendicular to the GaAs substrate. CONSTITUTION:The following layers are grown as crystals on an n-type GaAs substrate 10 by a molecular beam epitaxy method: an n-type clad layer 11 comprising n-type Al0.4Ga0.6As; a light receiving region 17 and a light emitting regions 18 comprising quantum barrier layers 12, 14 and 16 comprising GaAs and strain quantum well layers 13 and 15 comprising In0.35Ga0.65As; a p-type clad layer 19 comprising p-type Al0.4Ga0.6 As; and a cap layer 20 comprising p-type GaAs. A p-type electrode 21 and an n-type electrode 22 are formed by evaporation. A light input part 23, an electrode isolating region 24, a 45 deg. reflecting mirror 25 and resonator mirrors 26 and 27 are formed by etching. The width of the forbidden band of the light receiving and emitting regions is made narrower than the forbidden band width of the substrate 10. The light from the input part 23 is absorbed with the region 17. The light emitted from the region 18 is taken out in the direction perpendicular to the substrate 10. |
| 公开日期 | 1996-01-29 |
| 申请日期 | 1988-09-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46137]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 岩田 普. 面形光半導体装置. JP1996008393B2. 1996-01-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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