Liquid phase epitaxy method of forming a filimentary laser device
文献类型：专利
| 作者 | TSUKADA, TOSHIHISA |
| 发表日期 | 1980-07-22 |
| 专利号 | US4213805 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Liquid phase epitaxy method of forming a filimentary laser device |
| 英文摘要 | A semiconductor device of a filamentary laser is fabricated by a method including the steps of forming a first GaAlAs layer on a GaAs body, forming a laser active layer of GaAs on the first GaAlAs layer, etching the first GaAlAs layer and the laser active layer so as to have a mesa shaped structure and to expose the GaAs body, and forming a second GaAlAs layer on said exposed GaAs body and on the surface of said mesa shaped structure so that the mesa etched first GaAlAs layer and the mesa etched active layer are surrounded by the second GaAlAs layer. |
| 公开日期 | 1980-07-22 |
| 申请日期 | 1978-04-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46144]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | TSUKADA, TOSHIHISA. Liquid phase epitaxy method of forming a filimentary laser device. US4213805. 1980-07-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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