Nitride semiconductor light-emitting device
文献类型：专利
| 作者 | YOSHIDA, SHINJI; ORITA, KENJI; HASEGAWA, YOSHIAKI; MOCHIDA, ATSUNORI |
| 发表日期 | 2013-05-07 |
| 专利号 | US8437376 |
| 著作权人 | PANASONIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor light-emitting device |
| 英文摘要 | A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 μm−1 or less. |
| 公开日期 | 2013-05-07 |
| 申请日期 | 2011-11-11 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46158]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PANASONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | YOSHIDA, SHINJI,ORITA, KENJI,HASEGAWA, YOSHIAKI,et al. Nitride semiconductor light-emitting device. US8437376. 2013-05-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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