Single transverse mode operation in double heterostructure junction laser
文献类型：专利
| 作者 | KAWAGUCHI HITOSHI; FURUKAWA YOSHITAKA |
| 发表日期 | 1980-02-26 |
| 专利号 | CA1072666A |
| 著作权人 | NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORPORATION |
| 国家 | 加拿大 |
| 文献子类 | 授权发明 |
| 其他题名 | Single transverse mode operation in double heterostructure junction laser |
| 英文摘要 | Abstract of the Disclosure In single transverse mode semiconductor lasers, a semiconductor laser which comprises an optical confinement semiconductor layer having a refractive index of n3, an active layer of an optical waveguide having a refractive index of n1 and formed on said semiconductor layer, a buffer layer having a refractive index of n2 and formed on said active layer, a mode controlling striped semiconductor layer having a refractive index of n6 and formed on said buffer layer and opposing contacts, and is controllable in the transverse mode in the relations of n6 ? n2 < n1 and n3 < n |
| 公开日期 | 1980-02-26 |
| 申请日期 | 1976-10-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46165]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORPORATION |
| 推荐引用方式 GB/T 7714 | KAWAGUCHI HITOSHI,FURUKAWA YOSHITAKA. Single transverse mode operation in double heterostructure junction laser. CA1072666A. 1980-02-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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