中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Be-CONTAINING II-VI BLUE-GREEN LASER DIODES

文献类型:专利

作者MILLER, THOMAS, J.; HAASE, MICHAEL, A.; BAUDE, PAUL, F.; PASHLEY, MICHAEL, D.
发表日期2002-04-10
专利号EP1016175B1
著作权人MINNESOTA MINING AND MANUFACTURING COMPANY
国家欧洲专利局
文献子类授权发明
其他题名Be-CONTAINING II-VI BLUE-GREEN LASER DIODES
英文摘要A II-VI compound semiconductor laser diode (10) includes a plurality of II-VI semiconductor layers forming a pn junction supported by a single crystal GaAs semiconductor substrate (12). The layers formed in the pn junction include a first cladding layer (20) of a first conductivity type, a second cladding layer (22) of a second conductivity type, and at least a first guiding layer (14) between the first and second cladding layers (20, 22). A quantum well active layer (18) is positioned within the pn junction. Electrical energy is coupled to the laser diode (10) by first and second electrodes (40, 41). Various layers (14, 16, 20, 22, 36, 38) in the laser diode are formed using Be.
公开日期2002-04-10
申请日期1997-01-16
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/46167]  
专题半导体激光器专利数据库
作者单位MINNESOTA MINING AND MANUFACTURING COMPANY
推荐引用方式
GB/T 7714
MILLER, THOMAS, J.,HAASE, MICHAEL, A.,BAUDE, PAUL, F.,et al. Be-CONTAINING II-VI BLUE-GREEN LASER DIODES. EP1016175B1. 2002-04-10.

入库方式: OAI收割

来源:西安光学精密机械研究所

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