Be-CONTAINING II-VI BLUE-GREEN LASER DIODES
文献类型:专利
作者 | MILLER, THOMAS, J.; HAASE, MICHAEL, A.; BAUDE, PAUL, F.; PASHLEY, MICHAEL, D. |
发表日期 | 2002-04-10 |
专利号 | EP1016175B1 |
著作权人 | MINNESOTA MINING AND MANUFACTURING COMPANY |
国家 | 欧洲专利局 |
文献子类 | 授权发明 |
其他题名 | Be-CONTAINING II-VI BLUE-GREEN LASER DIODES |
英文摘要 | A II-VI compound semiconductor laser diode (10) includes a plurality of II-VI semiconductor layers forming a pn junction supported by a single crystal GaAs semiconductor substrate (12). The layers formed in the pn junction include a first cladding layer (20) of a first conductivity type, a second cladding layer (22) of a second conductivity type, and at least a first guiding layer (14) between the first and second cladding layers (20, 22). A quantum well active layer (18) is positioned within the pn junction. Electrical energy is coupled to the laser diode (10) by first and second electrodes (40, 41). Various layers (14, 16, 20, 22, 36, 38) in the laser diode are formed using Be. |
公开日期 | 2002-04-10 |
申请日期 | 1997-01-16 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/46167] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MINNESOTA MINING AND MANUFACTURING COMPANY |
推荐引用方式 GB/T 7714 | MILLER, THOMAS, J.,HAASE, MICHAEL, A.,BAUDE, PAUL, F.,et al. Be-CONTAINING II-VI BLUE-GREEN LASER DIODES. EP1016175B1. 2002-04-10. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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