Semiconductor diode laser, and method of manufacturing thereof
文献类型：专利
| 作者 | WEEGELS, LEO M.; DE VRIEZE, HENRICUS M.; VERMEULEN-HARTJES, MARIA H. C. |
| 发表日期 | 2000-06-20 |
| 专利号 | US6078603 |
| 著作权人 | UNIPHASE OPTO HOLDINGS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor diode laser, and method of manufacturing thereof |
| 英文摘要 | A diode laser is disclosed that is self-pulsating without an increase in the starting current or a decrease in the efficiency. A special coating on an end face of the laser comprises in order a first mirror, a medium having an optical thickness which is at least substantially equal to an integer number of times half the wavelength of the generated electromagnetic radiation, and a second mirror. The coating comprises exclusively materials which have a higher bandgap value than that which corresponds to the wavelength of the generated radiation, while the reflectivities of the mirrors and the deviation of the optical thickness of the medium with respect to an integer number of times half the emission wavelength are chosen such that the group velocity dispersion (GVD) adjacent the wavelength of the generated electromagnetic radiation is negative, and preferably a minimum. Pulse widening owing to pulses arising from automatic mode locking is no longer possible due to a sufficiently negative group velocity dispersion. A laser exhibiting stable self-pulsation is thus provided. |
| 公开日期 | 2000-06-20 |
| 申请日期 | 1997-12-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46176]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | UNIPHASE OPTO HOLDINGS, INC. |
| 推荐引用方式 GB/T 7714 | WEEGELS, LEO M.,DE VRIEZE, HENRICUS M.,VERMEULEN-HARTJES, MARIA H. C.. Semiconductor diode laser, and method of manufacturing thereof. US6078603. 2000-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。