Periodic monolayer semiconductor structures grown by molecular beam epitaxy
文献类型：专利
| 作者 | DINGLE, RAYMOND; GOSSARD, ARTHUR C.; PETROFF, PIERRE M.; WIEGMANN, WILLIAM |
| 发表日期 | 1980-05-27 |
| 专利号 | US4205329 |
| 著作权人 | BELL TELEPHONE LABORATORIES, INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Periodic monolayer semiconductor structures grown by molecular beam epitaxy |
| 英文摘要 | Suitably modified molecular beam epitaxy (MBE) techniques are used to synthesize single crystal, periodic monolayer superlattices of semiconductor alloys on single crystal substrates maintained below a critical growth temperature. Described is the fabrication of periodic structures of (GaAs)n(AlAs)m, where m and n are the number of contiguous monolayers of GaAs and AlAs, respectively, in each period of the structure. As many as 10,000 monolayers were grown in a single structure. Also described is the MBE growth of (AlxGa1-xAs)n(Ge2)m, quasi-superlattice and non-superlattice structures depending on the particular values of n, m and the growth temperature. Waveguides, heterostructure lasers and X-ray reflectors using some of the structures are also described. |
| 公开日期 | 1980-05-27 |
| 申请日期 | 1977-11-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46180]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BELL TELEPHONE LABORATORIES, INCORPORATED |
| 推荐引用方式 GB/T 7714 | DINGLE, RAYMOND,GOSSARD, ARTHUR C.,PETROFF, PIERRE M.,et al. Periodic monolayer semiconductor structures grown by molecular beam epitaxy. US4205329. 1980-05-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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