Semiconductor light emitting device and method for manufacturing same
文献类型：专利
| 作者 | TAKAGI, SHIGEYUKI; YABUHARA, HIDEHIKO |
| 发表日期 | 2015-07-07 |
| 专利号 | US9077154 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device and method for manufacturing same |
| 英文摘要 | According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 μm or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion. |
| 公开日期 | 2015-07-07 |
| 申请日期 | 2014-05-06 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46183]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | TAKAGI, SHIGEYUKI,YABUHARA, HIDEHIKO. Semiconductor light emitting device and method for manufacturing same. US9077154. 2015-07-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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