Ion-implanted planar-buried-heterostructure diode laser
文献类型：专利
| 作者 | BRENNAN, THOMAS M.; HAMMONS, BURRELL E.; MYERS, DAVID R.; VAWTER, GREGORY A. |
| 发表日期 | 1991-09-10 |
| 专利号 | US5048038 |
| 著作权人 | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Ion-implanted planar-buried-heterostructure diode laser |
| 英文摘要 | A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe. |
| 公开日期 | 1991-09-10 |
| 申请日期 | 1990-01-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46184]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES |
| 推荐引用方式 GB/T 7714 | BRENNAN, THOMAS M.,HAMMONS, BURRELL E.,MYERS, DAVID R.,et al. Ion-implanted planar-buried-heterostructure diode laser. US5048038. 1991-09-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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