Article comprising a semiconductor laser with stble facet coating
文献类型:专利
作者 | CHAND, NARESH; COMIZZOLI, ROBERT B.; OSENBACH, JOHN W.; ROXLO, CHARLES B.; TSANG, WON-TIEN |
发表日期 | 1995-08-08 |
专利号 | US5440575 |
著作权人 | AT&T IPM CORP. |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Article comprising a semiconductor laser with stble facet coating |
英文摘要 | Disclosed are high reliability semiconductor lasers that need not be maintained inside a hermetic enclosure. Such lasers can advantageously be used in a variety of applications, e.g., in optical fiber telecommunications, and in compact disc players. Such "non-hermetic" lasers comprise facet coatings that comprise a dielectric layer that has very low water saturation value. In preferred embodiments this dielectric layer is SiOx(1=x<2), deposited by a molecular beam method. Deposition conditions are selected to result in a dense material that is largely free of particulates and blisters, and is substantially impermeable to moisture. Among the deposition conditions is substantially normal beam incidence, and a relatively low deposition rate. Deposition is advantageously carried out under relatively high vacuum conditions. A quantitative method of determining the water level in a SiOx film is disclosed. |
公开日期 | 1995-08-08 |
申请日期 | 1994-04-06 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/46185] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | AT&T IPM CORP. |
推荐引用方式 GB/T 7714 | CHAND, NARESH,COMIZZOLI, ROBERT B.,OSENBACH, JOHN W.,et al. Article comprising a semiconductor laser with stble facet coating. US5440575. 1995-08-08. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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