Strained layer InP/InGaAs quantum well laser
文献类型：专利
| 作者 | FOROUHAR, SIAMAK; LARSSON, ANDERS G.; KSENDZOV, ALEXANDER; LANG, ROBERT J. |
| 发表日期 | 1993-10-26 |
| 专利号 | US5257276 |
| 著作权人 | CALIFORNIA INSTITUTE OF TECHNOLOGY A CORP. OF CALIFORNIA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Strained layer InP/InGaAs quantum well laser |
| 英文摘要 | Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In0.53Ga0.47As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In0.75Ga0.25As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 6 to 2.5 mu m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5x1017/cm3 to about 2x1018/cm3. Hydrogen sulfide is used for n-type dopant in the substrate at a concentration level in the range of about 1x1018/cm3. |
| 公开日期 | 1993-10-26 |
| 申请日期 | 1992-04-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46186]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CALIFORNIA INSTITUTE OF TECHNOLOGY A CORP. OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | FOROUHAR, SIAMAK,LARSSON, ANDERS G.,KSENDZOV, ALEXANDER,et al. Strained layer InP/InGaAs quantum well laser. US5257276. 1993-10-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。