Gain-coupled semiconductor laser device lowering blue shift
文献类型：专利
| 作者 | EKAWA, MITSURU |
| 发表日期 | 2005-02-08 |
| 专利号 | US6853661 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Gain-coupled semiconductor laser device lowering blue shift |
| 英文摘要 | A low clad layer made of semiconductor of a first conductivity type is formed on a semiconductor substrate. An active layer is formed on the low clad layer. The active layer is constituted by alternately stacking a strained well layer and a barrier layer. A partial or whole thickness of the active layer is periodically removed along a first direction parallel to the surface of the semiconductor substrate to form a diffraction grating. A filler made of semiconductor is embedded in the removed region. Strain of the strained well layer and strain of the filler have the same sign. An upper clad layer is formed on the active layer and filler and made of semiconductor of a second conductivity type. A semiconductor laser device is provided which has a smaller shift of spontaneous emission or PL even if a diffraction grating is formed in an active layer. |
| 公开日期 | 2005-02-08 |
| 申请日期 | 2003-02-14 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46187]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | EKAWA, MITSURU. Gain-coupled semiconductor laser device lowering blue shift. US6853661. 2005-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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