単一波長半導体レーザの製造方法
文献类型：专利
| 作者 | 大倉 裕二; 川間 吉竜; 武本 彰; 柿本 昇一 |
| 发表日期 | 1996-08-22 |
| 专利号 | JP2550502B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 単一波長半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:Not only to control an optical waveguide layer in shape but also to obtain a semiconductor laser which oscillates in a single wavelength high in probability by a method wherein two or more kinds of semiconductors different from each other in optical properties are alternately laminated to constitute the optical waveguide layer. CONSTITUTION:InGaAsP and InP are different from each other in chemical properties, for instance InGaAsP is etched by InO but not by HCl, and InP is has chemical properties reverse to those of InGaAsP. Therefore, InGaAsP and InP both 25Angstrom or so in thickness are alternately laminated to constitute an InGaAsP/InP optical waveguide layer 5, which is introduced, and the waveguide layers 5 are cyclically formed and monitored in shape, and the layers 5 are be controlled in thickness at intervals of 50Angstrom (10% of overall thickness) by selectively etching them corresponding to their shapes so as to make their refractive indexes adequate in cyclic fluctuation, and in result a semiconductor element which oscillates in a single wavelength high in probability can be realized. |
| 公开日期 | 1996-11-06 |
| 申请日期 | 1989-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46189]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 大倉 裕二,川間 吉竜,武本 彰,等. 単一波長半導体レーザの製造方法. JP2550502B2. 1996-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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