Anti-guided phase-locked array and manufacturing method therefor
文献类型：专利
| 作者 | KAMIYAMA, SATOSHI; OHNAKA, KIYOSHI |
| 发表日期 | 1994-06-21 |
| 专利号 | US5323405 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Anti-guided phase-locked array and manufacturing method therefor |
| 英文摘要 | A phase-locked laser array comprising a plurality of element regions for passing electric current into an active layer; and inter-element regions formed between the element regions. Each of the inter-element regions is so formed as to have two regions, i.e. a non-diffusion region at the center thereof and a diffusion regions disposed on both sides thereof, thereby rendering the refractive index in the non-diffusion region higher than that in the diffusion regions. The method of manufacturing the phase-locked laser array which is characterized by including a step growing an optical waveguide layer of superlattice on a portion of a second clad layer while diffusing impurities doped in the second clad layer into said optical waveguide layer, thereby forming a diffusion regions on both sides of the inter-element region. |
| 公开日期 | 1994-06-21 |
| 申请日期 | 1992-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46190]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | KAMIYAMA, SATOSHI,OHNAKA, KIYOSHI. Anti-guided phase-locked array and manufacturing method therefor. US5323405. 1994-06-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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