Quantum cascade laser: bias-neutral design
文献类型：专利
| 作者 | LYAKH, ARKADIY; MAULINI, RICHARD; TSEKOUN, ALEXEI; PATEL, C. KUMAR N. |
| 发表日期 | 2012-02-21 |
| 专利号 | US8121164 |
| 著作权人 | PRANALYTICA, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Quantum cascade laser: bias-neutral design |
| 英文摘要 | A quantum cascade laser (QCL) having a bias-neutral design and a semiconductor with multiple layers of AlxIn1-xAs/InyGa1-yAs. The first active region barrier has a thickness of less than fourteen angstroms, and the second active region barrier has a thickness of less than eleven angstroms. The lower active region wavefunction overlaps with each of the injector level wavefunctions. Also, the laser transition is vertical at a bias close to roll-over. The injector level 3′ is above a lower laser level 3, the injector level 2′ is below the lower laser level 3, and the active region level 2 is confined to the active region. The lower laser level 3 is separated from the active region level 2 by the energy of the LO phonon. The remaining active region states and the remaining injector states are either above the lower laser level 3 or significantly below the active region level 2. |
| 公开日期 | 2012-02-21 |
| 申请日期 | 2010-12-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46199]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PRANALYTICA, INC. |
| 推荐引用方式 GB/T 7714 | LYAKH, ARKADIY,MAULINI, RICHARD,TSEKOUN, ALEXEI,et al. Quantum cascade laser: bias-neutral design. US8121164. 2012-02-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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