Nitride-based semiconductor laser device
文献类型：专利
| 作者 | NOMURA, YASUHIKO; KANO, TAKASHI |
| 发表日期 | 2005-10-11 |
| 专利号 | US6954478 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride-based semiconductor laser device |
| 英文摘要 | A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer. |
| 公开日期 | 2005-10-11 |
| 申请日期 | 2003-02-03 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46203]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | NOMURA, YASUHIKO,KANO, TAKASHI. Nitride-based semiconductor laser device. US6954478. 2005-10-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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