Strained superlattice light emitting device
文献类型：专利
| 作者 | IRIKAWA, MICHINORI |
| 发表日期 | 1996-05-28 |
| 专利号 | US5521935 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Strained superlattice light emitting device |
| 英文摘要 | There is provided a strained superlattice light emitting device for emitting light with a wavelength band around 0.8 mu m that is free from polarization dependency or can emit light either in the TE or TM mode with an output level much higher than that of an ordinary bulk layer, regardless of the density of injected current or carriers. Such a device comprises an InP substrate 1 and a pair of latticematched cladding layers 2 and 6 arranged on the substrate 1 and including first and second conductive type Al(Ga) InAs layers and an active layer 4 sandwiched by the pair of cladding layers 2 and 6 and having a strained superlattice structure, wherein the well layers 4a and 4b of the active layer 4 strained superlattice structure are respectively a GaInAsP layer showing an inplane tensile strain of 0.3 to 3% relative to the substrate and a GaInAsP layer showing an in-plane compressive strain of 0.3 to 3% relative to the substrate and the barrier layer 4b of the strained superlattice structure comprises an AlGaInAs layer. |
| 公开日期 | 1996-05-28 |
| 申请日期 | 1994-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46204]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | IRIKAWA, MICHINORI. Strained superlattice light emitting device. US5521935. 1996-05-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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