Reduced mode laser and method of fabrication
文献类型：专利
| 作者 | SRINIVASAN, SWAMINATHAN THANDALAI; AGARWAL, RAJIV; THIBAULT, KENNETH JOSEPH; PATEL, RUSHIKESH |
| 发表日期 | 1997-12-09 |
| 专利号 | US5696784 |
| 著作权人 | II-VI LASER ENTERPRISE GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Reduced mode laser and method of fabrication |
| 英文摘要 | A reduced, lateral mode laser diode is fabricated using a self-aligning process which produces a well controlled weakly index-guided waveguide with strong current confinement. The structure includes ion implants for controlling current injection into the active region from the top of the ridge. The number of modes may be reduced to unity, resulting in a single lateral mode laser. A laser diode array is fabricated in the same way. |
| 公开日期 | 1997-12-09 |
| 申请日期 | 1996-04-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46209]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | II-VI LASER ENTERPRISE GMBH |
| 推荐引用方式 GB/T 7714 | SRINIVASAN, SWAMINATHAN THANDALAI,AGARWAL, RAJIV,THIBAULT, KENNETH JOSEPH,et al. Reduced mode laser and method of fabrication. US5696784. 1997-12-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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