Quantum well intermixing
文献类型：专利
| 作者 | OOI, BOON SIEW; LAM, YEE LOY; CHAN, YUEN CHUEN; ZHOU, YAN ; TAM, SIU CHUNG
|
| 发表日期 | 2003-09-09 |
| 专利号 | US6617188 |
| 著作权人 | NTU VENTURES PTE LTD |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Quantum well intermixing |
| 英文摘要 | The present invention provides a novel technique based on gray scale mask patterning (110), which requires only a single lithography and etching step (110, 120) to produce different thickness of SiO2 implantation mask (13) in selected regions followed by a one step IID (130) to achieve selective area intermixing. This novel, low cost, and simple technique can be applied for the fabrication of PICs in general, and WDM sources in particular. By applying a gray scale mask technique in IID in accordance with the present invention, the bandgap energy of a QW material can be tuned to different degrees across a wafer (14). This enables not only the integration of monolithic multiple-wavelength lasers but further extends to integrate with modulators and couplers on a single chip. This technique can also be applied to ease the fabrication and design process of superluminescent diodes (SLDs) by expanding the gain spectrum to a maximum after epitaxial growth. |
| 公开日期 | 2003-09-09 |
| 申请日期 | 2001-03-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46213]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NTU VENTURES PTE LTD |
| 推荐引用方式 GB/T 7714 | OOI, BOON SIEW,LAM, YEE LOY,CHAN, YUEN CHUEN,et al. Quantum well intermixing. US6617188. 2003-09-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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