Method of fabricating a semiconductor optical device
文献类型：专利
| 作者 | HIRATA, TAKAAKI |
| 发表日期 | 1992-09-08 |
| 专利号 | US5145792 |
| 著作权人 | OPTICAL MEASUREMENT TECHNOLOGY DEVELOPMENT CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating a semiconductor optical device |
| 英文摘要 | A semiconductor optical device having a quantum well structure which can easily integrate plural optical devices of band gaps which are different from each other, and yet can achieve a high coupling coefficient by means of disordering the quantum well structure to form a waveguide region except for the portion which is used as an active region. Non-absorbing edges can be formed on the semiconductor laser on the optically integrated circuits by disordering the facets of the quantum well structure with ion implantation and thermal processing. |
| 公开日期 | 1992-09-08 |
| 申请日期 | 1991-11-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46216]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OPTICAL MEASUREMENT TECHNOLOGY DEVELOPMENT CO., LTD. |
| 推荐引用方式 GB/T 7714 | HIRATA, TAKAAKI. Method of fabricating a semiconductor optical device. US5145792. 1992-09-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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