Semiconductor laser and method of fabricating the same
文献类型：专利
| 作者 | KIM, IN GYOO; KIM, SANG HOON; PARK, JAEGYU; KIM, GYUNGOCK; JANG, KI SEOK |
| 发表日期 | 2016-01-05 |
| 专利号 | US9231372 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method of fabricating the same |
| 英文摘要 | Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process. |
| 公开日期 | 2016-01-05 |
| 申请日期 | 2014-05-16 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46226]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | KIM, IN GYOO,KIM, SANG HOON,PARK, JAEGYU,et al. Semiconductor laser and method of fabricating the same. US9231372. 2016-01-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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