Semiconductor laser structure and method of manufacturing same
文献类型：专利
| 作者 | FANG, RUIYU; PAOLETTI, ROBERTO |
| 发表日期 | 2004-08-24 |
| 专利号 | US6782026 |
| 著作权人 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser structure and method of manufacturing same |
| 英文摘要 | A semiconductor laser structure includes a substrate and an active region having at least one active laser layer. The active region is included in a ridge protruding from an exposed surface of the substrate. The ridge extends in the direction of the laser cavity and includes at least two opposed and electrically connected lateral extensions defining respective metal bonding pads distributed along the length of the laser cavity. |
| 公开日期 | 2004-08-24 |
| 申请日期 | 2002-07-29 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46230]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 推荐引用方式 GB/T 7714 | FANG, RUIYU,PAOLETTI, ROBERTO. Semiconductor laser structure and method of manufacturing same. US6782026. 2004-08-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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