III-nitride compound semiconductor light emitting device
文献类型：专利
| 作者 | KIM, CHANG-TAE; KIM, KEUK; JEON, SOO-KUN; JANG, PIL-GUK; KIM, JONG-WON |
| 发表日期 | 2009-11-24 |
| 专利号 | US7622742 |
| 著作权人 | EPIVALLEY CO., LTD. F/K/A SUNGIL TELECOM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | III-nitride compound semiconductor light emitting device |
| 英文摘要 | The present invention relates to a III-nitride semiconductor light-emitting device having high external quantum efficiency, provides a III-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1-x-y)N layer, in which the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching and includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is roughened, thereby it is possible to increase external quantum efficiency of the light-emitting device. |
| 公开日期 | 2009-11-24 |
| 申请日期 | 2004-07-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46231]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | EPIVALLEY CO., LTD. F/K/A SUNGIL TELECOM CO., LTD. |
| 推荐引用方式 GB/T 7714 | KIM, CHANG-TAE,KIM, KEUK,JEON, SOO-KUN,et al. III-nitride compound semiconductor light emitting device. US7622742. 2009-11-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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