Broadband tunable semiconductor laser source
文献类型：专利
| 作者 | ADAMS, LAURA ELLEN; BETHEA, CLYDE GEORGE; FANG, WEI-CHIAO; NYKOLAK, GERALD; PEOPLE, ROOSEVELT; SERGENT, ARTHUR MIKE; TANBUN-EK, TAWEE; TSANG, WON-TIEN |
| 发表日期 | 2000-08-22 |
| 专利号 | US6108362 |
| 著作权人 | LUCENT TECHNOLOGIES INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Broadband tunable semiconductor laser source |
| 英文摘要 | A tunable semiconductor laser comprises a gain section having an MQW active region, a uniform pitch grating DFB region, and first waveguide. A composite reflector, including a second MQW region and a second waveguide, forms a cavity resonator with the DFB region. A voltage applied to the composite reflector induces a quantum confined stark effect, thereby allowing the wavelength to be altered. In one embodiment, the current drive to the active region and the shape of the first waveguide (e.g., a raised-sine function) are mutually adapted so that N longitudinal modes have essentially the same threshold gain and so that the DFB region spanned by the first waveguide is segmented into N zones, each zone providing optical feedback at a different wavelength corresponding to a different longitudinal mode. |
| 公开日期 | 2000-08-22 |
| 申请日期 | 1997-10-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46241]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUCENT TECHNOLOGIES INC. |
| 推荐引用方式 GB/T 7714 | ADAMS, LAURA ELLEN,BETHEA, CLYDE GEORGE,FANG, WEI-CHIAO,et al. Broadband tunable semiconductor laser source. US6108362. 2000-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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