Manufacturing method of semiconductor multi-layer film and semiconductor laser
文献类型：专利
| 作者 | MANNOU, MASAYA; ONAKA, KIYOSHI |
| 发表日期 | 1993-12-14 |
| 专利号 | US5270246 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Manufacturing method of semiconductor multi-layer film and semiconductor laser |
| 英文摘要 | When an n-type semiconductor layer is formed on a p-type semiconductor layer in a device such as a semiconductor multi-layer film, the n-type semiconductor layer is formed by adding a p-type dopant as well as an n-type dopant simultaneously. In a double heterostructure semiconductor laser including an AlGaInP active layer and AlGaInP cladding layers, when an n-type current blocking layer is formed on the p-type cladding layer, the n-type current blocking layer is formed by adding a p-type dopant as well as an n-type dopant simultaneously. |
| 公开日期 | 1993-12-14 |
| 申请日期 | 1992-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46252]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | MANNOU, MASAYA,ONAKA, KIYOSHI. Manufacturing method of semiconductor multi-layer film and semiconductor laser. US5270246. 1993-12-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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