Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage
文献类型：专利
| 作者 | NAKAMURA, JUNICHI; NAKATSU, HIROSHI; SASAKI, KAZUAKI |
| 发表日期 | 2002-10-22 |
| 专利号 | US6468818 |
| 著作权人 | XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage |
| 英文摘要 | A semiconductor light-emitting device has a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate and a layer grown on the upper clad layer of the light-emitting section. When growing the current diffusion layer from a crystal interface on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor DELTAa/a is not lower than 0.25% with respect to the upper clad layer at a crystal interface where the crystal composition changes on the upper clad layer of the light-emitting section, the growth rate at least at the start time of growth is made to be 0 mum/h or less. |
| 公开日期 | 2002-10-22 |
| 申请日期 | 2000-01-25 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46262]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | NAKAMURA, JUNICHI,NAKATSU, HIROSHI,SASAKI, KAZUAKI. Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage. US6468818. 2002-10-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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