Purging: a reliability assurance technique for semiconductor lasers utilizing a purging process
文献类型：专利
| 作者 | GORDON, EUGENE I.; HARTMAN, ROBERT L.; NASH, FRANKLIN R. |
| 发表日期 | 1986-03-04 |
| 专利号 | US4573255 |
| 著作权人 | BELL TELEPHONE LABORATORES, INCORPORATED A CORP. OF NY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Purging: a reliability assurance technique for semiconductor lasers utilizing a purging process |
| 英文摘要 | Prior to packaging, semiconductor lasers are purged by being subjected first to high temperature and high current simultaneously so as to suppress stimulated emission and stress the shunt paths which allow leakage current to flow around the active region. A prudent, but nonessential, second step is to lower the temperature and/or current so that the lasers emit stimulated emission (preferably strongly, near the peak output power), thereby stressing the active region. Lasers subjected to such a purge exhibit stabilized degradation rates in short times (of the order of a few hours) and provide a robust population which meets the performance criteria of long lifetime systems. |
| 公开日期 | 1986-03-04 |
| 申请日期 | 1984-03-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46268]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BELL TELEPHONE LABORATORES, INCORPORATED A CORP. OF NY |
| 推荐引用方式 GB/T 7714 | GORDON, EUGENE I.,HARTMAN, ROBERT L.,NASH, FRANKLIN R.. Purging: a reliability assurance technique for semiconductor lasers utilizing a purging process. US4573255. 1986-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。