Wavelength-tunable distributed-feedback semiconductor laser device
文献类型：专利
| 作者 | HIRAYAMA, YUZO; ONOMURA, MASAAKI |
| 发表日期 | 1993-12-28 |
| 专利号 | US5274649 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Wavelength-tunable distributed-feedback semiconductor laser device |
| 英文摘要 | An electronically wavelength-tunable distributed-feedback quantum well semiconductor laser includes a semiconductor substrate, an optical waveguide layer on the substrate, and a multiple quantum well structure section arranged on the optical waveguide layer and including first and second semiconductor layers which are alternately laminated on each other. The multiple quantum well structure section change regionally in the lamination number of the first and second layers, thereby defining a series of active regions with different gain versus carrier characteristics. A plurality of electrodes are formed on the upper portion of the multiple quantum well structure section positionally in association with the series of the activated regions. |
| 公开日期 | 1993-12-28 |
| 申请日期 | 1991-11-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46269]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | HIRAYAMA, YUZO,ONOMURA, MASAAKI. Wavelength-tunable distributed-feedback semiconductor laser device. US5274649. 1993-12-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。