半導体レーザ素子及び半導体レーザアレイ
文献类型：专利
| 作者 | 田中 俊明; 皆川 重量; 梶村 俊 |
| 发表日期 | 1997-11-28 |
| 专利号 | JP2723944B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子及び半導体レーザアレイ |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element, which makes a laser oscillation possible in a current of a low threshold value and has a transverse mode which is controlled stably even at the time of injection of a high current, by a method wherein a layer having a conductivity type different from that of a specified optical waveguide layer is formed on the specified optical waveguide layer on the upper part of an active layer as a current constricting layer. CONSTITUTION:A P-type AlGaInP optical waveguide layer on the upper part of an active layer is made thin at an extent of 0.1 to 0.5mum and an N-type AlGaAs layer is formed on the upper part of the optical waveguide layer and is used as a current constricting layer. At this time, by adjusting the composition of the AlGaAs layer so that the band gap of the current constricting layer becomes larger than that of the active layer, a waveguide structure having little photo absorption and using a gain distribution is formed. By this gain waveguide structure, the lateral reactive current can be reduced. Therefore, a laser oscillation becomes possible in a current of a low threshold value. Moreover, by optimizing the stripe width of the current constricting layer at an extent of 3 to 6mum, the spread of a current to the lateral direction of the active layer can be made small and the stability in a transverse mode can be improved. Therefore, an oscillation in a longitudinal multimode using a gain waveguide can be expected up to a high output in a kink-free state. |
| 公开日期 | 1998-03-09 |
| 申请日期 | 1989-01-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46272]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 田中 俊明,皆川 重量,梶村 俊. 半導体レーザ素子及び半導体レーザアレイ. JP2723944B2. 1997-11-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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