Semiconductor laser device including highly reflective coating film
文献类型：专利
| 作者 | NISHIGUCHI, HARUMI; MATSUOKA, HIROMASU; NAKAGAWA, YASUYUKI; KUNITSUGU, YASUHIRO |
| 发表日期 | 2010-11-02 |
| 专利号 | US7826507 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device including highly reflective coating film |
| 英文摘要 | A semiconductor light-emitting device includes a light generation unit generating light with an oscillation wavelength λ, a light outgoing facet from which light generated at the light generation unit emerges, a light reflecting facet at which light generated at the light generation unit is reflected, and a high reflection film at the light reflecting facet and made of a dielectric multilayered film of at least three layers. The high reflection film includes a first layer which is in contact with the light reflection facet, is constituted of Al2O3, and has a thickness smaller than λ/4n, wherein n is the refractive index of Al2O3, a second layer which is in contact with the first layer, and a third layer which is in contact with the second layer and has a refractive index different from the refractive index of the second layer. |
| 公开日期 | 2010-11-02 |
| 申请日期 | 2008-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46280]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | NISHIGUCHI, HARUMI,MATSUOKA, HIROMASU,NAKAGAWA, YASUYUKI,et al. Semiconductor laser device including highly reflective coating film. US7826507. 2010-11-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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