Gallium nitride based semiconductor laser with an improved aluminum gallium nitride cladding layer disposed between an active region and a substrate
文献类型：专利
| 作者 | KIMURA, AKITAKA |
| 发表日期 | 2000-02-22 |
| 专利号 | US6028877 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Gallium nitride based semiconductor laser with an improved aluminum gallium nitride cladding layer disposed between an active region and a substrate |
| 英文摘要 | In accordance with the first present invention, a cladding layer is provided between a gallium nitride based semiconductor active region and a substrate made of a material having a refraction index which is not lager than a refraction index of gallium nitride. The cladding layer includes at least one AlxGa1-xN layer. An averaged value of the index "x" of aluminum of the above at least one AlxGa1-xN layer is in the range of not less than 0.01 to less than 0.05 and a total thickness of the above at least one AlxGa1-xN layer is not less than 0.7 micrometers as well as the cladding layer has an averaged refractive index which is lower than the refractive index of gallium nitride. |
| 公开日期 | 2000-02-22 |
| 申请日期 | 1997-12-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46283]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | KIMURA, AKITAKA. Gallium nitride based semiconductor laser with an improved aluminum gallium nitride cladding layer disposed between an active region and a substrate. US6028877. 2000-02-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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