Semiconductor laser device including transparent electrode
文献类型：专利
| 作者 | UEDA, TETSUZO; YURI, MASAAKI |
| 发表日期 | 2010-11-02 |
| 专利号 | US7826512 |
| 著作权人 | PANASONIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device including transparent electrode |
| 英文摘要 | It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO2 blocking layer 9, an Ni/ITO cladding layer electrode 10 as a transparent electrode, a Ti/Au pad electrode 11, and a Ti/Al/Ni/Au electrode 12. The SiO2 blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni/ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer. |
| 公开日期 | 2010-11-02 |
| 申请日期 | 2007-09-05 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46284]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PANASONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | UEDA, TETSUZO,YURI, MASAAKI. Semiconductor laser device including transparent electrode. US7826512. 2010-11-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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