Multiquantum barrier laser having high electron and hole reflectivity of layers
文献类型：专利
| 作者 | SEKO, YASUJI; UEYANAGI, KIICHI; SHIRAKI, YASUHIRO |
| 发表日期 | 1995-06-13 |
| 专利号 | US5425041 |
| 著作权人 | FUJI XEROX CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Multiquantum barrier laser having high electron and hole reflectivity of layers |
| 英文摘要 | It is an object of the present invention to provide a highly efficient semiconductor laser unit having excellent temperature characteristics, in which electrons or holes are suppressed from overflowing from the active layer to the cladding layers while the threshold of current density is maintained low. The present invention is to provide a semiconductor laser unit fundamentally composed of an active layer and cladding layers in which the active layer is interposed between the cladding layers the semiconductor laser unit comprising: a multiquantum barrier layer including well layers and barrier layers disposed between the active layer and the cladding layers or disposed in the cladding layers close to the active layer, wherein the well and barrier layers have a high reflectivity with respect to the electrons and holes at a position close to GAMMA -point in the reciprocal lattice space, and also the well and barrier layers have a high reflectivity with respect to the electrons and holes at a position close to at least one of the primary symmetrical points. |
| 公开日期 | 1995-06-13 |
| 申请日期 | 1994-03-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46288]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJI XEROX CO., LTD. |
| 推荐引用方式 GB/T 7714 | SEKO, YASUJI,UEYANAGI, KIICHI,SHIRAKI, YASUHIRO. Multiquantum barrier laser having high electron and hole reflectivity of layers. US5425041. 1995-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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