Planar array of vertical-cavity, surface-emitting lasers
文献类型：专利
| 作者 | ORENSTEIN, MEIR; VON LEHMEN, ANN C. |
| 发表日期 | 1991-07-09 |
| 专利号 | US5031187 |
| 著作权人 | TTI INVENTIONS A LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Planar array of vertical-cavity, surface-emitting lasers |
| 英文摘要 | A planar array of vertical-cavity, surface-emitting diode lasers, and its method of making. The device comprises an active region having a quantum well region disposed between two Bragg reflector mirrors separated by a wavelength of the emitting laser. A large area of this structure is grown on a substrate and then laterally defined by implanting conductivity-reducing ions into the upper mirror in areas around the lasers. Thereby, the laterally defined laser array remains planar. Such an array can be made matrix-addressable by growing the structure on a conducting layer overlying an insulating substrate. After growth of the vertical structure, an etch or further implantation divides the conducting layer into strips forming bottom column electrodes. Top row electrodes are deposited in the perpendicular direction over the laterally defined top mirrors. |
| 公开日期 | 1991-07-09 |
| 申请日期 | 1990-02-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46291]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TTI INVENTIONS A LLC |
| 推荐引用方式 GB/T 7714 | ORENSTEIN, MEIR,VON LEHMEN, ANN C.. Planar array of vertical-cavity, surface-emitting lasers. US5031187. 1991-07-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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