Method of manufacturing a semiconductor light-emitting device
文献类型：专利
| 作者 | SEKII, HIROSHI; IMANAKA, KOICHI |
| 发表日期 | 1993-01-26 |
| 专利号 | US5182228 |
| 著作权人 | OMRON CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing a semiconductor light-emitting device |
| 英文摘要 | In a ridge waveguide-type semiconductor light-emitting device, a buried layer is composed of a high-resistance semiconductor material (e.g., amorphous silicon), thereby improving the heat-dissipating characteristic and prolonging lifetime. The buried layer is made higher than the top surface of the ridge, the top surface of the ridge is situated in the resulting recess, and an electrode is formed from the top surface of the ridge to the top surface of the surrounding buried layer to cover the entirety of these surfaces. Making the buried layer higher than the top of the ridge prevents an electrical short circuit for being caused by an electrically conductive bonding agent used in junction-down mounting. |
| 公开日期 | 1993-01-26 |
| 申请日期 | 1992-01-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46300]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON CORPORATION |
| 推荐引用方式 GB/T 7714 | SEKII, HIROSHI,IMANAKA, KOICHI. Method of manufacturing a semiconductor light-emitting device. US5182228. 1993-01-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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